发明名称 LEAD FRAME, SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To suppress crosstalk to have improved electric characteristics by providing a shield lead extending from a die bonding area between leads. SOLUTION: Outwardly deriving lead parts are provided such that they divide the spacing between two adjacent lateral bars at regular intervals and they are constructed of outer leads 7, whose one ends are supported by a longitudinally extending tie bar 6 and the other ends are supported by a side frame 2, and inner leads 8 extending from the tie bar 6 as if they are extensions of the outer leads 7. A lead frame 1 comprises shield leads 9 formed such that each of which is provided between two adjacent inner leads 8 and has one end supported by a die bonding area 5 and the other end supported by the tie bar 6. The shield lead is located between two adjacent inner leads 8 so that, when the die bonding area 5 is grounded, the shield lead 9 having ground potential exhibits shielding effect between these adjacent inner leads.
申请公布号 JPH11340405(A) 申请公布日期 1999.12.10
申请号 JP19980141319 申请日期 1998.05.22
申请人 FUJITSU QUANTUM DEVICES KK 发明人 SANO YOSHIAKI
分类号 H01L21/60;H01L23/50;H01L23/552 主分类号 H01L21/60
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