| 摘要 |
PROBLEM TO BE SOLVED: To improve adhesion between an n-electrode and a supporting body by providing a first layer of metal obtaining ohmic contact with an n-type nitride semiconductor, a second layer containing a metal whose melting point is higher than that of Al and a third layer containing Sn in the n-electrode from a side close to a second main face. SOLUTION: An element structure having an n-side clad layer 14, formed of the superlattice structure of an undoped AlGaN layer and a Si doped n-type GaN layer and a p-side clad layer 18, formed of the super lattice structure of an Mg doped AlGaN layer and an undoped GaN layer, is formed in the first main face side of a nitride semiconductor substrate 10 formed of an n-type nitride semiconductor. An n-electrode 30 is formed on the second main face side of the nitride semiconductor substrate 10. A first layer 31 of a metal for obtaining ohmic contact with the n-type nitride semiconductor, a second layer 32 containing metal whose melting point is higher than Al, and a third layer 33 containing Sn or In, are stacked and formed in the n-electrode 30 from a side close to the second main face. |
