| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a formation method of a metal bump capable of locally controlling plating thickness and forming the bump with a step and the bumps of different heights inside the same chip or wafer. SOLUTION: A first metallic film part 4 connected to a cathode and a second metallic film part insulated from the metallic film part 4 through a separation part 6 are provided on a semiconductor wafer 1. Electroplating is performed at the prescribed part of the first metallic film part 4 first, the first metallic film part 4 and the second metallic film part are electrically short-circuited by the growth of a plating layer growing in the separation part 6 accompanying the progress of the plating and thereafter, the electroplating is performed to the respective prescribed parts of both metallic film parts.</p> |
