| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of effectively absorbing thermal stress, its manufacturing method, a circuit board and an electronic apparatus. SOLUTION: This semiconductor device is provided with a semiconductor element 12 having electrodes 14, a passivation film 11 which is formed on the surface of the semiconductor element 12 excluding at least a part of the respective electrodes 14, a conducting foil 22 which is arranged above the surface on which the passivation film 11 is formed with a specified interval in the thickness direction, an external electrode 26 formed on the conducting foil 22, an intermediate layer 16 which is formed between the passivation film 11 and the conducting foil 22 and retains the conducting foil 22, and a wiring 18 electrically connecting the electrodes 14 and the conducting foil 22. In the intermediate layer 16, a recessed part 16a where an aperture region becomes wider as it approaches the conducting foil 22 side from the passivation film 11 side is formed below a region containing a bonding part to the external electrode 26 in the conducting foil 22. |
