Method of producing polycrystalline silicon thin films for microelectronic components, especially thin film transistors on glass substrates

摘要

The method involves irradiating an amorphous silicon wafer of about 100 to 400 microns thickness with a short pulse laser in the visible range and with a pulse repetition rate between 2 kHz and 35 kHz that is set so that the fluence acting on the wafer lies between 0.3 and 2 J/cubic cm. The irradiation is performed with locally strongly overlapping laser pulses by subjecting each point on the wafer to 50 to 1000 successive pulses. The parameters fluence and number of locally overlapping pules are not both predefined at the lower end of their ranges.