COMPOSITION FOR REFLECTION REDUCING COATING

摘要

A composition for a reflection reducing coating which comprises (A) a perfluoroalkylsulfonic acid represented by the general formula: CnF2n+1SO3H, wherein n denotes an integer of 4 to 8, (B) an organic amine, (C) a water-soluble polymer, (D) a perfluoroalkylsulfonamide represented by the general formula: CnF2n+1SO2NH2, wherein n denotes an integer of 1 to 8, and (E) water, and has a pH of 1.3 to 3.3. A resist pattern is obtained by coating the composition on a photoresist film formed on a substrate to form a reflection reducing coating, and then subjecting it to exposure and development. This composition for a reflection reducing coating can be coated uniformly on a photoresist film irrespective of the type of resist and the shape of the surface of a substrate, and can be used for providing a resist pattern which is free from the occurrence of standing wave effect, multireflection effect, and a T-shape pattern form and a dimensional change caused through the elapse of time after exposure.