| 摘要 |
1,193,775. Magnetic storage devices. AMPEX CORP. 9 May, 1968 [22 May, 1967], No. 22104/68. Heading H3B. [Also in Division C7] The prevent creep in a magnetic film memory element which comprises two spaced anisotropic thin films 14, 18 supported by a substrate 12, the upper magnetic film 18 is deposited on an intermediate film of non-magnetic material the grain size of which is equal to or less than the width of a Neel domain wall. As shown in Fig. 1, a memory element comprises a glass, polyester or metal substrate 12 having a conductive layer 15 for the electrodeposition of a thin magnetic film 14 if the substrate is non- conductive. The intermediate film 16 of required grain size is deposited on to the magnetic film 14 and the second thin magnetic film 18 is then formed by electrodeposition. In a modification, Fig. 3 (not shown) the intermediate non-magnetic film comprises a layer (22) of a fine grain non-magnetic material and a layer (24) of non-magnetic material having the required minimum grain size which may be nickelphosphorus. In a further modification, Fig. 4, the substrate has a gold layer 26, and each thin magnetic film 14, 18 is deposited on a respective intermediate layer of nickel-phosphorus 16, 28. An array of memory elements may be formed by photo-etching a sandwich structure so as to form individual rectangular elements, the array being then provided with co-ordinate drive lines; Fig. 5 (not shown). Examples of compositions suitable for the electroless deposition of a nickel-phosphorus intermediate film are given (see Division C7). Other intermediate film materials are stated to be chromium, rhodium or non-magnetic nickel-chromium. |
