| 摘要 |
<p>The invention relates to resonator structures of radio communication apparatus. According to the invention, at least one resonator structure and at least one switch structure are manufactured on the same substrate during the same process. This is especially advantageous when using bridge type BAW resonators and micromechanical switches, since the same process steps which are used for creating the bridge structures, can be used to create the micromechanical switch structure. Integration of switch structures and resonators on the same substrate allows the manufacture of very compact filter and resonator structures needed for multi-system mobile communication means. According to another aspect of the invention a special property of BAW resonators is utilized, namely that BAW resonators can be integrated on substrates which are commonly used for active circuitry, such as silicon (Si) and gallium arsenide (GaAs) surfaces. According to this aspect of the invention, the switches are realized with transistor structures using, for example, MESFET transistors. <IMAGE></p> |
