| 摘要 |
A non-volatile memory device and a method of fabricating the same are disclosed. The non-volatile memory device includes a semiconductor substrate having a first conductive type, a plurality of first, second and third impurity regions having a second conductive type in the substrate, a plurality of first insulating layer only on the substrate between the second and third impurity regions, a second insulating layer on the substrate except on the first insulating layer formed, a plurality of floating gate on the first and second insulating layers, a plurality of dielectric layer on the floating gate, a plurality of control gate on the dielectric layer.
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