Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer

摘要

A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.