| 摘要 |
The method sequence results in a conductive connection between two zones of a first conductivity type. In particular, one of the zones is a source/drain zone of a transistor. Instead of the conventional additional nitride layer, the connection is produced by implanting directly into the third insulation layer, which is present anyway, and by utilizing the fact that the third insulation layer forms the lateral spacers on the gatestack disposed on the region of the second conductivity type.
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