| 摘要 |
An AlGaInP-based semiconductor light-emitting device is of a real-guide type and has excellent crystallinity and excellent laser characteristics. In an AlGaInP-based semiconductor light-emitting device having at least a first conductivity-type first cladding layer (3), an active layer (4) and a second conductivity-type second cladding layer (5), a stripe-shaped ridge (8) is formed on the second cladding layer (5) and first conductivity-type AlGaAs current confinement layers (19) with a band gap larger than that of the active layer (4) and whose refractive index is smaller than that of the active layer are formed so as to bury grooves (7) formed at both sides of the stripe-shaped ridge (8).
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