| 摘要 |
The present invention provides a semiconductor photodetector formed over a substrate and being positioned adjacent to an optical fiber guiding groove also formed in said substrate bounding structure, said semiconductor photodetector having an optical waveguide layer including an optical absorption layer, wherein an edge portion of said optical waveguide layer is bounded to a side portion of said optical fiber guiding groove through an insulation layer having an refractive index higher than any parts of said optical waveguide layer.
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