Semi-conductor device with a memory cell

摘要

A memory cell contains a cross-coupled pair of a first and second transistor. The voltage of the drains are operated in a range between a first and second supply voltage. The back-gates of the first and second transistor are coupled to the connection for the first supply voltage. The device contains a circuit arrangement for deriving a source lying between the voltage of the back-gates and the second supply voltage. The circuit arrangement keeps sources of the first and second transistor at the source voltage.