发明名称 |
Non-volatile semiconductor memory device |
摘要 |
A plurality of memory cells are arranged in lattice arrangement to form a memory cell array. Each of the memory cells is provided with a source. Data in the memory cell can be electrically written and erased. Sources of all the memory cells are connected in common. Also, a source voltage control circuit having two or more kinds of load characteristics is connected to the sources connected in common. According to a load characteristics selected from a plurality of load characteristics, source voltage of the memory cell is controlled.
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申请公布号 |
US5998831(A) |
申请公布日期 |
1999.12.07 |
申请号 |
US19970936803 |
申请日期 |
1997.09.24 |
申请人 |
NEC CORPORATION |
发明人 |
KODAMA, NORIAKI;ISHIGE, KIYOKAZU;MIKI, ATSUNORI;JINBO, TOSHIKATSU;NINOMIYA, KAZUHISA |
分类号 |
G11C16/02;G11C16/04;G11C16/06;G11C16/30;(IPC1-7):H01L29/788 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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