发明名称 Semiconductor integrated circuit with an internal voltage generating circuit requiring a reduced occupied area
摘要 A semiconductor integrated circuit includes a charge pump for issuing an internal power supply voltage higher than an external power supply voltage, two level detectors for detecting a magnitude of the internal power supply voltage issued from the charge pump, and a composite ring oscillator including two ring oscillators connected to these level detectors and having different oscillation frequencies, respectively. Depending on the magnitude of the internal power supply voltage issued from the charge pump, the signals generated by the ring oscillators are selectively issued to the charge pump.
申请公布号 US5999009(A) 申请公布日期 1999.12.07
申请号 US19970901244 申请日期 1997.07.25
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MITSUI, KATSUYOSHI
分类号 G11C11/413;G11C11/408;H01L21/822;H01L27/04;H02M3/07;H03K5/08;(IPC1-7):G01R31/26 主分类号 G11C11/413
代理机构 代理人
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