发明名称 |
Process for fabricating soft magnetic thin films |
摘要 |
An Fe-Zr-N base thin film composed of a metal nitride is formed by reactive sputtering. At the reactive sputtering step, the stress of the thin film is controlled by causing relative movement of the substrate with respect to a target in such a manner that the substrate can be periodically opposite to the target, or applying a negative bias voltage to the substrate, or performing said relative movement of the substrate with the application of the negative bias voltage to the substrate.
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申请公布号 |
US5997698(A) |
申请公布日期 |
1999.12.07 |
申请号 |
US19970933138 |
申请日期 |
1997.09.18 |
申请人 |
TDK CORPORATION |
发明人 |
MINO, TETSUYA;UNO, YASUFUMI |
分类号 |
G11B5/31;C23C14/00;C23C14/06;C23C14/50;C23C14/58;G11B5/127;G11B5/39;H01F10/08;H01F10/14;H01F10/32;H01F41/18;H01L43/12;(IPC1-7):C23C14/00;C23C14/34 |
主分类号 |
G11B5/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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