| 摘要 |
PURPOSE:To obtain a crystal of p-n junction gallium nitride compound semiconductor excellent in crystallizability. CONSTITUTION:When a buffer layer represented by general formula GaXAl1-XN (0<=X<=1) and multilayer film layer, which is obtained when thin-film AlN layers and GaN layers are alternately grown in at least one layer laminated on the buffer layer, are grown on a substrate; the lattice defect of GaN is stopped by the multilayer film layer. |
