| 发明名称 |
Input buffer circuit for semiconductor device |
| 摘要 |
A CMOS input buffer for semiconductor devices, that is capable of protecting its MOS transistors from gate oxide breakdown due to the application of high voltage greater than a normal power supply voltage.
|
| 申请公布号 |
US5999390(A) |
申请公布日期 |
1999.12.07 |
| 申请号 |
US19980122076 |
申请日期 |
1998.07.24 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, BAEK-HYUNG;KWAK, CHOONG-KEUN;SHIN, HO-GEUN |
| 分类号 |
H01L27/04;G01R31/28;G01R31/3185;H01L21/822;H01L21/8238;H01L27/092;H03K19/003;H03K19/0175;(IPC1-7):H02H3/18 |
主分类号 |
H01L27/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
