| 摘要 |
1291209 Semi-conductor electrodes SIEMENS AG 19 April 1971 [13 March 1970] 23728/71 Heading H1K [Also in Division C7] A metal contact layer is produced on a semiconductor layer of, e.g. silicon by spraying thereon a solution of molybdenum or chromium diacetyl dihydrazone tetracarbonyl in an organic lacquer; e.g. nitrocellulose in a butyl acetate-ether mixture. Excess is removed by centrifuging, and the deposit is thermally dried and pyrolysed to the metal in oxygenargon atmosphere, after which the layer is alloyed into the semi-conductor by heating in a tube furnace. The lacquer vehicle may be photosensitive, and be selectively exposed and developed; so that the deposit is removable from parts of the semi-conductor before pyrolysis to the metal. Alternatively a photosensitive lacquer may be applied over the metal containing lacquer for the same purpose. |
