Contour preparing for PN-junctions in semiconductor bodies

摘要

Contacts (6) are formed on the semiconductor body and the surface is covered with a chemically resistant layer (2). The body is split vertically through the polar regions to form cross-sections. Controllable voltage sources are coupled to the electric contacts. The body is then etched by a concentration-selective chemical solution under applied voltages. Images of the etched regions are taken by electron microscope and stored. The boundary contour between etched and non-etched region is evaluated.