| 摘要 |
<p>A process chamber (25) for processing a semiconductor substrate, comprises a support for supporting a substrate (50). A gas distributor (90) provided for introducing process gas into the chamber (25), comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate (50), into the chamber (25). Optionally, a gas flow controller (100) controls and pulses the flow of process gas through one or more gas nozzles (140). An exhaust is used to exhaust the process gas from the chamber (25).</p> |
