发明名称 |
UN DISPOSITIVO SEMICONDUCTOR INTEGRADO. |
摘要 |
<p>In an integrated semiconductor device according to the invention, a resistance element with small resistance comprises between its electric connections a number of parallel arranged resistance zones of the same width and thickness. The influence of inaccuracies in providing the electric connections is eliminated, and a zone of a resistance element with large resistor may have the same width and thickness as the parallel zones of the resistance element with small resistance.</p> |
申请公布号 |
ES379433(A1) |
申请公布日期 |
1972.10.16 |
申请号 |
ES19330003794 |
申请日期 |
1970.05.08 |
申请人 |
N. V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
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分类号 |
H01L27/04;H01L21/822;H01L27/08;(IPC1-7):01L/ |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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