| 摘要 |
<p>A lower electrode (106) having a mounting surface the temperature of which is kept at 40 °C is provided in a processing chamber (104) of an etching apparatus (100). After a wafer (W) is mounted on the lower electrode (106), a processing gas having a composition containing C4F8, CH2F2, and Ar is introduced into the processing chamber (104). The flow rates of the gases are 7, 4, and 500 sccm respectively, and the pressure of the atmosphere inside the processing chamber (104) is maintained at 50 mTorr. High-frequency power having a frequency of 13.56 MHz and an electric power of 1500 W is fed to the lower electrode (106) to produce a plasma. By using the plasma, a carbon film is formed on a shoulder part (207) of an SiNx film layer (206) exposed in a contact hole (210), and deposition of carbon on the bottom of the contact hole (210) is prevented. Thus, while preventing the SiNx film layer from being damaged, the contact hole (210) having a high aspect ratio is formed.</p> |
