Fullerites used in manufacture of electronic components

摘要

Halogen and/or nitrogen and/or oxygen molecules, atoms or ions are caused to impinge on a fullerite crystal or an epitaxial fullerite coating. The impingement can occur during the growth of the fullerite under vacuum at 0-100 deg C, e.g. room temperature. The halogen is preferably chlorine. In a final step, an undoped fullerite layer is deposited on the doped fullerite layer by vacuum evaporation. Independent claims is included for the fullerite doped by this process and for its use in the production of electronic components.