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发明名称
Verfahren zur Bewertung der dielektrischen Schicht nicht-flüchtiger EPROM, EEPROM und flash-EEPROM-Speicher
摘要
申请公布号
DE69325767(T2)
申请公布日期
1999.12.02
申请号
DE19936025767T
申请日期
1993.04.01
申请人
STMICROELECTRONICS S.R.L., AGRATE BRIANZA
发明人
CAPPELLETTI, PAOLO GIUSEPPE;RAVAZZI, LEONARDO
分类号
G11C17/00;G11C29/00;G11C29/50;G11C29/56;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C29/00;H01L21/66
主分类号
G11C17/00
代理机构
代理人
主权项
地址
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