| 摘要 |
<p>A method of forming cobalt disilicide on source/drain regions and a polysilicon gate electrode of an MOS transistor uses chemical vapor deposition to simplify the contact formation process. Epitaxial CoSi2 layers over the source/drain regions and a polycrystalline CoSi2 layer over the gate electrode are respectively formed at a temperature in the range of 600 to 650 °C, simultaneously with the deposition of a cobalt layer. According to the present invention, the silicide formation process is simplified since both subsequent heat treatment and protective layer deposition can be omitted. The resultant CoSi2 layer has enhanced step coverage and uniform interface characteristics suitable for the interconnection process of an ultra fine contact structure. And the epitaxial CoSi2 layer formed at a relatively low temperature range of 600 to 650 °C has a low interface defect density between the silicide layer and the silicon substrate, enhancing contact characteristics at the source/drain regions suitable for the fabrication of high integration semiconductor devices.</p> |
