| 摘要 |
<p>Disclosed is a plasma CVD apparatus, comprising a reaction vessel (21), a reactant gas introducing pipe (25) for introducing a reactant gas into the reaction vessel (21), an exhaust pipe (27) for withdrawing the waste gas including the reaction gas from within the reaction vessel (21), an anode electrode (23) arranged within the wreaction vessel (21) for supporting a substrate (24) to be processed and having a heat embedded therein, a cathode electrode (22) arranged within the reaction vessel (21) to face the anode electrode (23), and a high frequency power source (29) for supplying a high frequency power having a frequency of 30 to 200 MHz to the cathode electrode (29), glow discharge being generated by the power supplied from the high frequency power source (29) so as to form an amorphous, microcrystalline or polycrystalline thin film on the substrate (24) held on the anode electrode (23), wherein the high frequency power is supplied to the cathode electrode (22) through at least four power supply points, and a power distributor (31) is used for uniformly supplying the high frequency power to the cathode electrode (22). <IMAGE></p> |
