Semiconductor memory device and data processing methods thereof

摘要

A circuit for bypassing a write to semiconductor memory capable of doing so when a read operation is performed on a read address that matches the write address for write operation that is bypassed. The circuit detects patterns of a read address that matches a write address performed within the last two cycles. Depending on the type of match found, the circuit generates one or more of several bypass control signals. The current input data or input data from one of the last two cycles is selected for output responsive to the bypass control signals resulting in a bypass of writing to memory If a bypass control signal is not selected then the input data is written to memory after the delay necessary to determine if the write operation should be bypassed. <IMAGE>