Memory device having error detection and correction function, and methods for writing and erasing the memory device

摘要

The present invention relates to a memory device and specifically the multilevel type with error check and correction function and having a data input (DI), a data output (DO) and an address input (AI) and being of the type comprising first memory means (DM) designed to be accessed by means of address for containing user data, second memory means (EM) for containing error data concerning said user data, a control logic (CL) designed to receive in the writing phase from said address input (AI) and said data input (DI) a writing address and user data respectively and to generate error data and to write said data in said first means (DM) and second means (EM) respectively and designed to receive in the reading phase from said address input (AI) a reading address and extract corresponding user data and error data and combine them to correct any errors and supply them to said data output (DO) and characterised in that said second means (EM) are the type designed to be accessed by means of content and said content for access corresponding to addresses of said first means (DM).