发明名称 THIN FILM PHOTOELECTRIC TRANSDUCER
摘要 <p>A thin film photoelectric converter includes a polycrystalline photoelectric conversion layer (4) and a metal thin film (3) covering one main surface of the polycrystalline photoelectric layer. Polycrystalline photoelectric conversion layer (4) has an average thickness in the range from 0.5 to 20 µm and at least one of main surfaces of polycrystalline photoelectric conversion layer (4) has a textured surface structure. The textured structure has fine unevenness with level differences smaller than half of the thickness of polycrystalline photoelectric conversion layer (4) and substantially in the range from 0.05 to 3 µm.</p>
申请公布号 EP0940857(A4) 申请公布日期 1999.12.01
申请号 EP19980902190 申请日期 1998.02.12
申请人 KANEKA CORPORATION 发明人 NAKAJIMA, AKIHIKO;YOSHIMI, MASASHI;SUZUKI, TAKAYUKI;YAMAMOTO, KENJI
分类号 H01L31/04;H01L31/0236;H01L31/052;H01L31/075;(IPC1-7):H01L31/04 主分类号 H01L31/04
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