SEMICONDUCTOR DEVICE FABRICATION METHOD

摘要

In a method of fabricating a semiconductor device, an interlayer insulating film is selectively etched to remove a level difference at an area of the interlayer insulating film on a cell plate on cylindrical capacitors and simultaneously form a concave portion on a fuse portion. Since the etching is ended to a degree that the cell plate is not exposed, the concave portion can be formed on the fuse portion not exposed. This does not add a step of forming a protection film on the fuse portion.