发明名称 |
Producing adjustment structures in semiconducting substrates |
摘要 |
The invention relates to a method of producing calibration structures in semiconductor substrates in the production of micromechanical systems with integrated semiconductor electronics. The inventive method comprises the following steps: structuring a first layer (3) on a first substrate (4, 5, 6) to produce first areas (2) which are required for the function of the components; producing second areas (1) in the first layer (3) which represent the calibration structures. The second areas (1) have a refractive index which differs from the refractive index of the adjacent areas. The method further comprises the step of joining the first substrate (4, 5, 6) with a second substrate (12) so that the first substrate (3) is embedded between said two substrates. Reducing the thickness of the first or second substrate to a remaining thickness. The substrate layer having said remaining thickness represents, for example, the membrane of a pressure sensor. The invention provides a means for preventing the mechanical properties of supporting layers from being weakened and allows integration into the production process without requiring additional process steps or extensive etching methods.
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申请公布号 |
DE19913612(C1) |
申请公布日期 |
1999.12.02 |
申请号 |
DE19991013612 |
申请日期 |
1999.03.25 |
申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. |
发明人 |
NEUMEIER, KARL;BOLLMANN, DIETER |
分类号 |
B81B3/00;B81C1/00;(IPC1-7):H01L23/544;H01L21/306 |
主分类号 |
B81B3/00 |
代理机构 |
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