发明名称 Producing adjustment structures in semiconducting substrates
摘要 The invention relates to a method of producing calibration structures in semiconductor substrates in the production of micromechanical systems with integrated semiconductor electronics. The inventive method comprises the following steps: structuring a first layer (3) on a first substrate (4, 5, 6) to produce first areas (2) which are required for the function of the components; producing second areas (1) in the first layer (3) which represent the calibration structures. The second areas (1) have a refractive index which differs from the refractive index of the adjacent areas. The method further comprises the step of joining the first substrate (4, 5, 6) with a second substrate (12) so that the first substrate (3) is embedded between said two substrates. Reducing the thickness of the first or second substrate to a remaining thickness. The substrate layer having said remaining thickness represents, for example, the membrane of a pressure sensor. The invention provides a means for preventing the mechanical properties of supporting layers from being weakened and allows integration into the production process without requiring additional process steps or extensive etching methods.
申请公布号 DE19913612(C1) 申请公布日期 1999.12.02
申请号 DE19991013612 申请日期 1999.03.25
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 发明人 NEUMEIER, KARL;BOLLMANN, DIETER
分类号 B81B3/00;B81C1/00;(IPC1-7):H01L23/544;H01L21/306 主分类号 B81B3/00
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