发明名称 |
High integration density MOS technology power device |
摘要 |
<p>High density MOS technology power device structure, comprising body regions (31A-31D) of a first conductivity type formed in a semiconductor layer (1) of a second conductivity type, characterized in that said body regions comprise at least one plurality of substantially rectilinear and substantially parallel body stripes (32) each joined at its ends to adjacent body stripes (32) by means of junction regions (33), so that said at least one plurality of body stripes (32) and said junction regions (33) form a continuous, serpentine-shaped body region (31A-31D). <IMAGE></p> |
申请公布号 |
EP0961325(A1) |
申请公布日期 |
1999.12.01 |
申请号 |
EP19980830321 |
申请日期 |
1998.05.26 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
MAGRI' ANGELO;FRISINA, FERRUCCIO |
分类号 |
H01L29/06;H01L29/10;H01L29/423;H01L29/78;(IPC1-7):H01L29/78;H01L29/739 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|