A SEMICONDUCTOR PROCESSING METHOD FOR FORMING A CONTACT PEDESTAL FOR A STORAGE NODE OF A CAPACITOR IN INTEGRATED CIRCUITRY,申请号EP19970916177-传众专利搜索

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发明名称	A SEMICONDUCTOR PROCESSING METHOD FOR FORMING A CONTACT PEDESTAL FOR A STORAGE NODE OF A CAPACITOR IN INTEGRATED CIRCUITRY
摘要
申请公布号	EP0891634(A4)	申请公布日期	1999.12.01
申请号	EP19970916177	申请日期	1997.03.21
申请人	MICRON TECHNOLOGY, INC.	发明人	DENNISON, CHARLES, H.
分类号	H01L21/768;H01L21/28;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L29/94;H01L31/119	主分类号	H01L21/768
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