| 摘要 |
A transistor including source/drain regions 116, a channel area, a gate oxide and a gate electrode 114a is formed on one side of a semiconductor substrate. A first insulator layer 118, capacitor 120, second insulating layer 122 are formed and then chemically mechanically polished before bonding a handling wafer 124 thereto. A third insulating layer 128 is then formed on the other surface of the semiconductor substrate and either a second gate electrode 126 (figure 3B) or a conductor electrically connected to the channel 126a and 126b (Figure 3A) is/are then formed.
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