Pattern forming method utilizing first insulative and then conductive overlayer and underlayer

摘要

Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.