发明名称 Particle controlling method and apparatus for a plasma processing chamber
摘要 A plasma processing chamber includes a substrate holder and a member of silicon nitride such as a liner, focus ring or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize particle contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.
申请公布号 US5993594(A) 申请公布日期 1999.11.30
申请号 US19960722371 申请日期 1996.09.30
申请人 LAM RESEARCH CORPORATION 发明人 WICKER, THOMAS E.;MARASCHIN, ROBERT A.
分类号 H05H1/46;C23C16/505;H01J37/32;H01L21/302;H01L21/31;(IPC1-7):H05H1/00 主分类号 H05H1/46
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