| 摘要 |
PROBLEM TO BE SOLVED: To simplify a manufacturing process and prevent troubles due to focal point error by making an oxide layer have a protruding region positioned directly above a conductive layer, forming an insulating layer on the oxide layer, removing the part of the insulating film in the protruding region by polishing and forming an opening part on the conductive layer. SOLUTION: An oxide layer 56 is formed on conductive layers 53, 54 and on a substrate 50. Protruding regions 57 and 61 are formed. The protruding region 61 is positioned on the conductive layer 54, and the protruding region 57 is positioned on the conductive layer 53. An insulating layer 58 is formed on the oxide layer 56 by low-pressure chemical deposition. A part of the insulating layer 58 in the protruding region 61 is removed by chemimechanical polishing, an opening part 49 is formed and the oxide layer 56 is exposed from the opening part. Thus, the number of photolithography process and etching process can be reduced by one, and unnecessary contact between the conductive layers is prevented. |
