SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To enable to manufacture semiconductor element with excellent manufacturing yield. SOLUTION: After a semiconductor layer 14 composed of a nondoped CaN layer is formed on one main surface of a sapphire substrate 12, a semiconductor layer 16 composed of gallium nitride based compound semiconductor layer 16 is formed on the other main surface of the sapphire substrate 12. After scribe lines 34 are formed in the sapphire substrate 12 and the semiconductor layer 14, each element is separated and a semiconductor element 10 is manufactured.