| 摘要 |
PROBLEM TO BE SOLVED: To protect a growth process against contamination even after repeated use by employing a silicon carbide susceptor. SOLUTION: A silicon carbide susceptor of 50 mm×20 mm×10 mm, for example, is prepared from polycrystallineβ-type silicon carbide synthesized by CVD using monosilane and propane. Resistivity is set at 10μΩ.m at the time of CVD by doping it with phosphorus or nitrogen. A thin silicon carbide film is grown epitaxially on a single crystal silicon carbide wafer using such a susceptor repeatedly. When a thin silicon carbide film is grown on a single crystal silicon carbide wafer, n-type conductivity can be attained without requiring any intended impurity doping. When a silicon carbide suspector is employed, contamination of epitaxial process is avoided and durability of susceptor can be enhanced resulting in cost reduction.
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