Apparatus and a method for measuring a density of defects existing in a semiconductor wafer and an apparatus and a method for measuring an inherent scattering intensity of defects existing in a semiconductor wafer

摘要

A laser is irradiated on the surface of a semiconductor wafer while a stage mounted on the semiconductor wafer is moved, and scattering lights emitted from the surface of the semiconductor wafer is received by the receiving device, and an intensity distribution of the scattering lights is measured. The intensity distribution is processed by the controller so as to obtain a defect density of the semiconductor wafer.