| 摘要 |
PROBLEM TO BE SOLVED: To prevent insulation failures between adjacent pads due to the collapses of selectivity during the selective growth of conductor for forming pads, in a method for forming connection pads which are used for memory cell contacts of a DRAM or the like. SOLUTION: Contact holes reaching a source and drain region 3 on a metal oxide semiconductor(MOS) transistor are made into an interlayer insulating film 6. A contact plug 8-1 is formed of polycrystalline silicon. After that, a pad 8-2 of connection pad is formed through a method, by which polycrystalline silicon is not deposited on the interlayer insulating film 6 but is grown only on the plug 8-1. The diameter of the pad can be made larger than that of the plug by conducting an isotropic selective growth. Since selective growth is applied only to an upper part of the pad, the growth can be completed in a short time and the selectivity is hardly collapsed. Also, since the pad is formed by selective growth on the conductive plug formed in advance, it does not depend on the sub material of substrate. |
