| 摘要 |
PROBLEM TO BE SOLVED: To increase the controllability of the recess depth in a resist film, during the manufacturing process for a trench capacitor of the embedded plate type in order for improving the yield and the productivity. SOLUTION: In a method for manufacturing a semiconductor device having a trench capacitor, the development ratio for a resist film is measured through in situ observation in peripheral circuit which forms the regions of chips, excluding trenches 4, and the depth of recesses in the resist film embedded in the trenches 4 using the development ratio is controlled accurately so that the depth is equal to the desired value. Furthermore, in the exposure of the resist film, a mask for exposure, a part of which corresponding to either of the peripheral circuit regions or embedded plate forming regions of the trenches 4 is covered with a translucent film, is used for recess forming operation in the resist film. In this way, the controllability of the recess depth can be further enhanced. According to the present method, the checking of the recess amount of the resist through scanning electron microscope(SEM) observation performed conventionally is not longer necessary, and the productivity is improved. |
