发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To refresh even when plural banks are provided with a common redundant decoder. SOLUTION: At the time of refreshing operation, each redundant decoder XRED only compares an address shown by a line address signal XADD with an address of a defective memory cell stored without referring to a bank selection signal included in the line address signal XADD. A redundant memory cell selecting circuit XRDN outputs for each bank A, B redundancy substitution selection signal XRDNS (A), (B) for showing a bank which substitutes for the redundant memory cell. Therefore, even at the time of refreshing when the banks A, B are activated at the same time, it is possible to select whether or not to substitute for each bank.
申请公布号 JPH11328992(A) 申请公布日期 1999.11.30
申请号 JP19980181063 申请日期 1998.06.26
申请人 NEC CORP 发明人 FUJITA MASAMORI
分类号 G11C11/401;G11C11/406;G11C29/00;G11C29/04 主分类号 G11C11/401
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