| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly-reliable semiconductor laser, having stable self-excited oscillation characteristic by optimally setting the doping level, thickness, etc., of a saturable absorption layer and spacer layer constituting a semiconductor laser. SOLUTION: A self-excited oscillating type semiconductor laser has an active layer 106 and clad structure sandwiching the active layer 106, the clad structure comprises a saturable absorption layer 104 which is doped with an n-type impurity of 1×10<18> cm<-3> or more, the carrier life in the saturable absorption layer 104 is reduced by the high-concn. impurity to obtain stable self-excited oscillation characteristics. As the result, a semiconductor laser having low relative noise intensity over a wide temperature range can be realized. |
