发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To stably form a desired boosting voltage at the time of turning-on a power source by comparing a reference voltage and the divided voltage of a boosting voltage, controlling these voltage in such a manner that the boosting voltage attains the prescribed voltage corresponding to the reference voltage, making detection that the output voltage of the reference voltage generation circuit attains the prescribed reference voltage and making the operation of a booster circuit effective. SOLUTION: The VCN booster circuit forms the boosting voltage VCN higher than the power-supply voltage Vcc. A limiter circuit compares the voltage VCN/A obtd. by dividing the boosting voltage VCN to 1/A and the reference voltage VREF and controls the boosting voltage VCN so as to attain the desired specified voltage. A VREF generating circuit generates the reference voltage VREF by receiving a start signal RESOB of power source resetting. When a VREF rising detection circuit makes detection that the reference voltage VREF attains the prescribed voltage, the VCN booster circuit is made effective by a detection signal SVREF. As a result, the runaway of the booster circuit at the time of turning-on the power source may be prevented.</p>
申请公布号 JPH11328984(A) 申请公布日期 1999.11.30
申请号 JP19980126932 申请日期 1998.05.11
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD;MITSUBISHI ELECTRIC CORP 发明人 KISHIMOTO JIRO;KUBONO SHOJI;SATO HIROSHI;HARADA TOSHINORI;MAEJIMA MEGUMI
分类号 G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C16/06
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