| 摘要 |
In order to manufacture a phase shift mask for producing a dark line pattern for semiconductor manufacturing, an opaque thin film pattern for forming a dark line is formed at a part of the boundary domain between a phase shift domain and a non-phase shift domain of a quartz substrate. Further, at a boundary portion of the phase shit domain where no opaque thin film pattern is formed, a transition portion is formed in which the etching depth stepwise chances up to 2n different depths by applying etching n times to the portion by different etching patterns at different etching depths. A phase shift mask for producing an open fine line in semiconductor manufacturing is efficiently manufactured with fewer etching steps.
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