发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a multilayered structure and provided with connection pads for interlayer connection by which the increase of the contact resistance of a contact plug can be prevented by preventing the etching of the contact plug due to misalignment in a lithography process. SOLUTION: After contact holes are formed by etching an interlayer insulating film 107 by using an insulating film 108 for separating connection pad and first conductive films 111 (sidewalls) as a mask and a second conductive film 113 is formed on the entire surface of the insulating film 107 so as to fill up the contact holes, connection pads 114 are formed by partially removing the second conductive film 113 through CMP.
申请公布号 JPH11330238(A) 申请公布日期 1999.11.30
申请号 JP19980132312 申请日期 1998.05.14
申请人 NEC CORP 发明人 TAKADA YUICHI
分类号 H01L21/28;H01L21/768;H01L21/8242;H01L27/108 主分类号 H01L21/28
代理机构 代理人
主权项
地址