| 摘要 |
PROBLEM TO BE SOLVED: To provide, in a simple process, dual damasking technology for forming dual damask structure without the occurrence of misalignments. SOLUTION: The forming technology of dual damask structure contains a process for forming an oxide layer 56 and a mask layer 58 on the oxide layer 56. The oxide layer 56 and the mask layer 58 have projections 57 positioned above first conduction layers 54. Chemical-mechanical polishing is executed, and the projections are removed. Then, an opening 59 is formed. A second conductive layer 68 is formed in the opening 59, and the second conductive layer 68 is brought into contact with the first conductive layer 54. |
